? 2008 ixys corporation, all rights reserved polarhv tm hiperfet n-channel power mosfet phase leg topology ds100039(09/08) symbol test conditions characteristic values min. typ. max. c p coupling capacitance between shorted 40 pf pins and mounting tab in the case d s ,d a pin - pin 1.7 mm d s ,d a pin - backside metal 5.5 mm weight 9 g FMM22-05PF features z silicon chip on direct-copper bond (dcb) substrate - ul recognized package - isolated mounting surface - 2500v electrical isolation z avalanche rated z low q g z low drain-to-tab capacitance z low package inductance advantages z low gate drive requirement z high power density z fast intrinsic rectifier z low drain to ground capacitance z fast switching applications z dc and ac motor drives z ups, solar and wind power inverters z synchronous rectifiers z multi-phase dc to dc converters z industrial battery chargers z switching power supplies symbol test conditions maximum ratings v dss t j = 25 c to 150 c 500 v v dgr t j = 25 c to 150 c, r gs = 1m 500 v v gss continuous 30 v v gsm transient 40 v i d25 t c = 25 c 13 a i dm t c = 25 c, pulse width limited by t jm 55 a i a t c = 25 c 22 a e as t c = 25 c 750 mj dv/dt i s i dm , v dd v dss ,t j 150 c 10 v/ns p d t c = 25 c 132 w advance technical information symbol test conditions maximum ratings t j -55 ... +150 c t jm 150 c t stg -55 ... +150 c v isold 50/60h z , rms, t = 1min, leads-to-tab 2500 ~v t l 1.6mm (0.062 in.) from case for 10s 300 c t sold plastic body for 10s 260 c f c mounting force 20..120 / 4.5..27 n/lb. v dss = 500v i d25 = 13a r ds(on) 270m t rr(max) 200ns t2 3 5 4 1 2 t1 3 5 4 1 2 isoplus i4-pak tm 1 5 isolated tab
ixys reserves the right to change limits, test conditions, and dimensions. FMM22-05PF isoplus i4-pak tm outline ref: ixys co 0077 r0 ixys mosfets and igbts are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 b1 6,683,344 6,727,585 7,005,734 b2 7,157,338b2 by one or more of the following u.s. patents: 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123 b1 6,534,343 6,710,405 b2 6,759,692 7,063,975 b2 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 b1 6,583,505 6,710,463 6,771,478 b2 7,071,537 symbol test conditions 2 characteristic values (t j = 25 c unless otherwise specified) min. typ. max. bv dss v gs = 0v, i d = 250 a 500 v v gs(th) v ds = v gs , i d = 1ma 3.0 5.0 v i gss v gs = 30 v, v ds = 0v 100 na i dss v ds = v dss 5 a v gs = 0v t j = 125 c 250 a r ds(on) v gs = 10v, i d = 11a, note 1 270 m g fs v ds = 20v, i d = 11a, note 1 20 s c iss 2630 pf c oss v gs = 0v, v ds = 25v, f = 1mhz 310 pf c rss 27 pf t d(on) resistive switching times 22 ns t r v gs = 10v, v ds = 0.5 z v dss , i d = 22a 25 ns t d(off) r g = 10 (external) 72 ns t f 21 ns q g(on) 50 nc q gs v gs = 10v, v ds = 0.5 z v dss , i d = 11a 16 nc q gd 18 nc r thjc 0.95 c/w r thcs 0.15 c/w source-drain diode characteristic values t j = 25 c unless otherwise specified) symbol test conditions 3 min. typ. max. i s v gs = 0v 13 a i sm repetitive, pulse width limited by t jm 55 a v sd i f = 22a, v gs = 0v, note 1 1.5 v t rr 200 ns i rm 7.0 a q rm 0.7 c note 1: pulse test, t 300 s, duty cycle, d 2 %. advance technical information the product presented herein is under development. the technical specifications offered are derived from a subjective evaluation of the design, based upon prior knowledge and experience, and constitute a "considered reflection" of the anticipated objective result. ixys reserves the right to change limits, test conditions, and dimensions without notice. i f = 22a, -di/dt = 100a/ s v r = 100v, v gs = 0v
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